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The RN1110,LXHF(CT is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN epitaxial planar silicon transistor with internal bias resistors within an SSM (SOT-416) surface-mount package. Key electrical specifications include a collector-emitter voltage of 50V, a continuous collector current of 100mA, and a power dissipation rating of 100mW. The device features a typical base input resistance of 10kOhms and achieves a minimum DC current gain of 120 at specified test conditions. It supports a maximum operating frequency of 250MHz and operates within a junction temperature range from -55°C to +150°C.
Verify the specific suffix LXHF(CT against the official Toshiba datasheet to confirm manufacturing origin and compliance standards. Ensure the ordering code matches the required tape-and-reel or cut-tape configuration. Cross-reference the AEC-Q qualification status if automotive reliability is required for the target application.
Select this component when a single NPN digital transistor with a 10kOhm base resistor is required. Compare the 100mA current limit and 50V voltage rating against load requirements. Consider the SSM package size constraints relative to available PCB real estate and thermal dissipation needs for the specific environment.
This part belongs to the RN11xx series of Bias Resistor Built-In Transistors (BRTs). These devices are designed as complementary counterparts to other series like the RN21xx. They replace discrete resistor-transistor networks, reducing component count and assembly time in general-purpose semiconductor applications.
Publicly confirmed substitute part numbers for RN1110,LXHF(CT were not found in the provided source material. Verify compatibility with equivalents such as DDTC114TET1G or similar NPN BRTs only through official cross-reference documentation.