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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN1110MFV,L3F is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It utilizes the PCT process for high-speed switching and integrates an input resistor (R1) to simplify circuit design. The device features a VESM (SOT-723) surface-mount package with dimensions of 1.2 x 1.2 x 0.5 mm, suitable for high-density mounting. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a power dissipation (PC) of 150 mW at 25°C on an FR4 board. The RN1110MFV variant specifies an R1 value of 4.7 kΩ.
Feature Summary
- Integrates a bias resistor directly into the transistor structure to reduce component count and assembly costs.
- Utilizes an ultra-small VESM package designed for very high-density mounting applications.
- Employs a Silicon NPN Epitaxial Type (PCT Process) for optimized switching performance.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging details and compliance status. Ensure the selected part number matches the required resistor value configuration. Confirm that the application environment remains within the specified absolute maximum ratings to maintain reliability standards.
Selection Notes
Select this component when a compact NPN digital transistor with a 4.7 kΩ base resistor is required. Compare the 150 mW power dissipation limit against thermal constraints in dense PCB layouts. Consider the complementary RN2110MFV if a PNP equivalent is needed for push-pull configurations.
Part Context
This component belongs to the RN11xxMFV series of bias resistor built-in transistors from Toshiba. These devices are designed as general-purpose replacements for discrete BJT and resistor combinations. The RN1110MFV specifically pairs with the RN2110MFV as its complementary PNP counterpart within the same family.
Replacement Considerations
Publicly confirmed substitutes include DDTC144GE-7-F, DTC114TET1G, DTC114TETL, and DTC143TETL. Verify pinout compatibility and electrical parameters before substitution.
