RN1110(T5L,F,T)

Overview

The RN1110(T5L,F,T) is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It features an NPN silicon epitaxial structure with integrated bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (PC) of 100 mW at 25°C ambient temperature. The device has a typical input resistance (R1) of 4.7 kΩ and a DC current gain (hFE) ranging from 120 to 700. It operates within a junction temperature range up to 150°C and utilizes the SSM surface-mount package.

Feature Summary

• Integrates built-in bias resistors to reduce component count and simplify manufacturing processes
• Designed for switching, inverter, interface, and driver circuit applications
• Provides complementary functionality to the RN2110 and RN2111 PNP series

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging format and tape-and-reel specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Confirm that the selected component meets the required reliability standards for the intended operating environment.

Selection Notes

Select this component when a single NPN transistor with fixed bias resistors is required to replace discrete resistor networks. Verify that the 4.7 kΩ input resistance aligns with the driving logic levels. Ensure the 50 V collector-emitter voltage rating exceeds the maximum circuit voltage and that the 100 mA current capacity satisfies load requirements.

Part Context

This part belongs to the RN1110/RN1111 family of Bias Resistor Built-in Transistors. These devices are designed to integrate a single NPN transistor with base and emitter resistors into a compact surface-mount package. This integration reduces board space and simplifies assembly compared to using separate discrete components.

Replacement Considerations

The RN2110 serves as the complementary PNP counterpart within the same product family. For direct replacement, verify that the substitute component matches the 50 V VCEO, 100 mA IC, and 4.7 kΩ input resistance specifications.