RN1111ACT(TPL3)

RN1111ACT(TPL3)

  • Description:TRANS PREBIAS NPN 50V 0.08A CST3
  • Series:-

SKU:354c99df1231 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.08A CST3
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Cut Tape (CT)
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):80 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:-
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-101, SOT-883
  • Supplier Device Package:CST3

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RN1111ACT(TPL3)

Overview

The RN1111ACT(TPL3) is a single NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a bias resistor within an SSM-3 (SOT-416) surface-mount package. Key electrical specifications include a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a typical input resistance of 10 kOhms. The device features a minimum DC current gain of 120 at 1 mA and 5 V, with a transition frequency of 250 MHz. Power dissipation is rated at 100 mW, operating within a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates a built-in bias resistor to simplify circuit design and reduce component count.
  • Provides high-speed switching capabilities suitable for digital logic applications.
  • Offers robust thermal performance with a maximum junction temperature of 150°C.

Applications

  • General-purpose signal switching in consumer electronics.
  • Driver circuits for small-signal loads in industrial control systems.
  • Level shifting interfaces between microcontrollers and peripheral devices.

Procurement Notes

Verify the specific suffix ACT(TPL3) against official Toshiba documentation to confirm packaging type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any recent product change notices affecting marking or pin configuration before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN digital transistor with a 10 kOhm base resistor is required. Compare the 100 mA current rating and 50 V breakdown voltage against load requirements. Consider the SSM-3 footprint constraints and ensure the 100 mW power dissipation limit accommodates the expected duty cycle and ambient temperature conditions.

Part Context

This part belongs to the RN1111 series of pre-biased transistors from Toshiba. The series offers various configurations and resistance values. The ACT(TPL3) suffix typically denotes a specific taping and reel format for automated assembly, distinguishing it from bulk or cut-tape variants within the same electrical family.

Replacement Considerations

Cross-reference with equivalent NPN digital transistors featuring similar 50V/100mA ratings and 10kOhm internal resistance. Verify pinout compatibility with the SSM-3 package to ensure direct replacement without PCB redesign. Check manufacturer datasheets for matching hFE and saturation voltage characteristics.

RN1111ACT(TPL3)RN1111ACT(TPL3)

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