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The RN1111ACT(TPL3) is a single NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a bias resistor within an SSM-3 (SOT-416) surface-mount package. Key electrical specifications include a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a typical input resistance of 10 kOhms. The device features a minimum DC current gain of 120 at 1 mA and 5 V, with a transition frequency of 250 MHz. Power dissipation is rated at 100 mW, operating within a temperature range of -55°C to +150°C.
Verify the specific suffix ACT(TPL3) against official Toshiba documentation to confirm packaging type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any recent product change notices affecting marking or pin configuration before finalizing procurement orders.
Select this component when a compact NPN digital transistor with a 10 kOhm base resistor is required. Compare the 100 mA current rating and 50 V breakdown voltage against load requirements. Consider the SSM-3 footprint constraints and ensure the 100 mW power dissipation limit accommodates the expected duty cycle and ambient temperature conditions.
This part belongs to the RN1111 series of pre-biased transistors from Toshiba. The series offers various configurations and resistance values. The ACT(TPL3) suffix typically denotes a specific taping and reel format for automated assembly, distinguishing it from bulk or cut-tape variants within the same electrical family.
Cross-reference with equivalent NPN digital transistors featuring similar 50V/100mA ratings and 10kOhm internal resistance. Verify pinout compatibility with the SSM-3 package to ensure direct replacement without PCB redesign. Check manufacturer datasheets for matching hFE and saturation voltage characteristics.