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The RN1111,LF(CT is a single NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a bias resistor within an SSM (SC-75/SOT-416) surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage of 50 V, a continuous collector current of 100 mA, and a maximum power dissipation of 100 mW. The device features a typical input base resistance of 10 kOhms, a minimum DC current gain (hFE) of 120 at 1 mA and 5 V, and a transition frequency of 250 MHz. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through official documentation before procurement. Cross-reference the full part number with authorized distributors to validate authenticity and traceability.
Select this component for applications requiring a compact NPN digital transistor with integrated biasing. Ensure the required collector current does not exceed 100 mA and the operating voltage remains below 50 V. Verify that the SSM package dimensions fit the target PCB layout constraints.
This component belongs to the RN1111 series of bias resistor built-in transistors from Toshiba. It is designed as a complementary counterpart to PNP types like the RN2111 series. The series is engineered to replace discrete transistor-resistor combinations, offering space savings and simplified manufacturing processes in electronic designs.
Publicly confirmed substitute part numbers include DDTC144GE-7-F, DTC114TET1G, DTC114TETL, and DTC143TETL. Verify pinout compatibility and electrical parameter equivalence before substitution.