RN1111MFV,L3F

Overview

The RN1111MFV,L3F is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates a 10 kΩ input resistor (R1) with an epitaxial planar silicon transistor in a VESM (SOT-723) surface-mount package. The device supports a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation of 150 mW at 25°C on an FR4 board. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at IC=1mA/VCE=5V, a maximum collector cutoff current of 100 nA, and a typical transition frequency of 250 MHz.

Feature Summary

• Integrates a bias resistor directly into the transistor structure to reduce component count and assembly costs.
• Utilizes an ultra-small VESM package designed for high-density mounting applications.
• Features a PCT process for reliable performance in switching and interface circuits.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix L3F against official Toshiba documentation to confirm packaging details and compliance status. Ensure that the selected variant matches the required RoHS compatibility and AEC-Q101 qualification if automotive standards are mandated. Cross-reference the manufacturer part number with distributor listings to confirm availability and authenticity before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN digital transistor with a 10 kΩ base resistor is required. Compare the 100 mA current rating and 50 V breakdown voltage against circuit load requirements. Consider the complementary RN2111MFV for PNP applications. Verify thermal derating needs if operating near the 150 mW dissipation limit or elevated temperatures.

Part Context

This component belongs to the RN11xxMFV series of Bias Resistor Built-in Transistors (BRTs). It serves as the NPN counterpart to the RN2111MFV PNP device. The series is engineered to simplify circuit design by replacing discrete transistors and resistors with a single integrated package, facilitating smaller form factors in modern electronic equipment.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult Toshiba sales representatives for direct equivalents or cross-reference with other manufacturers' BRT catalogs using matching electrical parameters such as 50V VCEO, 100mA IC, and 10kΩ R1.

FAQ

What is the internal configuration of the RN1111MFV?

It is a single NPN transistor with one built-in base resistor (R1) of 10 kΩ.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 50 V.

What is the minimum DC current gain?

The minimum DC current gain (hFE) is 120, measured at IC = 1 mA and VCE = 5 V.