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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.08A CST3
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：80 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：-
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-101, SOT-883
- Supplier Device Package：CST3
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Overview
The RN1112ACT(TPL3) is a single NPN epitaxial planar silicon digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates an internal bias resistor network to reduce component count and simplify circuit design. The device features a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 80 mA, and a power dissipation (PC) of 100 mW at 25°C. The DC current gain (hFE) ranges from 120 to 700 under standard test conditions. The typical input resistance for the RN1112ACT variant is 22 kΩ.
Feature Summary
- Integrates a built-in bias resistor network within a compact package to minimize external components and assembly costs.
- Designed specifically for switching, inverter, interface, and driver circuit applications.
- Utilizes PCT process technology for reliable NPN epitaxial planar construction.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging format and compliance status. Confirm that the requested part number matches the exact electrical characteristics required for the target application before finalizing procurement orders.
Selection Notes
Select this component when a single NPN digital transistor with integrated bias resistors is required for space-constrained designs. Ensure the 80 mA collector current and 50 V breakdown voltage meet the system requirements. Verify the specific input resistance value needed for the intended logic level compatibility.
Part Context
This component belongs to the RN111xACT series of Bias Resistor Built-in Transistors (BRT). It serves as the NPN counterpart to the complementary PNP devices in the same family. The ACT designation indicates the specific resistor values and performance characteristics defined by Toshiba for this product line.
Replacement Considerations
The datasheet identifies the RN2112ACT as the complementary PNP device. No other direct substitute part numbers are documented in the provided source material. Verify pinout and electrical parameters if considering alternative manufacturers.
FAQ
What is the maximum collector-emitter voltage for the RN1112ACT?
The absolute maximum rating for the collector-emitter voltage (VCEO) is 50 V.
Does the RN1112ACT include internal resistors?
Yes, it incorporates a built-in bias resistor network to reduce the number of external parts required.
What is the typical DC current gain (hFE)?
The DC current gain (hFE) has a minimum specification of 120 and a maximum of 700 when tested at VCE = 5 V and IC = 1 mA.
