RN1112,LXHF(CT

Overview

The RN1112,LXHF(CT is a single NPN pre-biased digital transistor manufactured by Toshiba Semiconductor and Storage. It features an integrated bias resistor network within an SSM-3 surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a maximum operating frequency of 250 MHz. The device incorporates a base series resistor (Q1BSR) of 22 kOhms and an emitter-base resistor (Q1BER) of 22 kOhms. It supports a power dissipation of 100 mW and operates at temperatures up to +150°C. The component is qualified under AEC-Q200 standards for automotive applications.

Feature Summary

• Integrates NPN bipolar transistor with dual bias resistors for simplified circuit design
• Automotive-grade qualification ensuring reliability in harsh environments
• High-speed switching capability suitable for high-frequency signal processing

Applications

• Automotive electronic control units requiring robust switching components
• General-purpose logic level shifting and interface circuits
• Power management systems utilizing low-voltage switching applications

Procurement Notes

Verify the specific suffix LXHF(CT) against the manufacturer's latest datasheet to confirm packaging details and RoHS compliance status. Ensure that the AEC-Q200 qualification aligns with your project's automotive reliability requirements. Cross-reference the pinout configuration for the SSM-3 package to prevent installation errors during assembly processes.

Selection Notes

Select this component when a single NPN pre-biased transistor with 50 V rating and 100 mA current capacity is required. The 22 kOhm input resistance configuration is suitable for standard logic interface applications. Consider the SSM-3 package size for space-constrained PCB layouts. Verify thermal performance constraints relative to the 100 mW power dissipation limit in your specific application environment.

Part Context

This part belongs to Toshiba's RN series of single pre-biased digital transistors. These devices combine a BJT with internal resistors to reduce board space and component count. The RN1112 variant specifically utilizes an NPN configuration with equal base and emitter bias resistances, distinguishing it from other series members with different resistance ratios or polarities.

Replacement Considerations

Direct substitutes may include other single NPN pre-biased transistors with matching 50 V VCEO, 100 mA IC, and similar 22 kOhm bias resistor values. Verify package compatibility (SSM-3/SOT-416) and electrical characteristics before substitution.