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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN1112MFV,L3F is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates an internal base resistor (R1) with a nominal value of 22 kΩ into a compact SOT-723 surface-mount package. The device supports a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation of 150 mW at 25°C on an FR4 board. Electrical characteristics include a minimum DC current gain (hFE) of 120 at IC = 1 mA and VCE = 5 V, with a typical collector-emitter saturation voltage of 0.1 V at IC = 5 mA.
Feature Summary
- Integrates a bias resistor directly into the transistor structure to reduce component count and assembly costs.
- Utilizes an ultra-small SOT-723 package designed for high-density mounting applications.
- Provides complementary functionality to the PNP RN2112MFV device.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific part number suffix against official Toshiba documentation to confirm packaging configuration and compliance status. Ensure that design parameters remain within absolute maximum ratings to maintain reliability. Consult the Toshiba Semiconductor Reliability Handbook for derating guidelines before finalizing integration into hardware designs.
Selection Notes
Select this component when a pre-biased NPN transistor is required for logic interfacing or switching tasks. The integrated 22 kΩ resistor simplifies circuit design by eliminating external biasing components. Verify that the 50 V voltage rating and 100 mA current capacity align with the target application requirements.
Part Context
This component belongs to the RN111x series of Bias Resistor Built-in Transistors (BRT). It serves as the NPN counterpart to the RN2112MFV PNP device. The series is engineered to minimize printed circuit board space while maintaining standard bipolar junction transistor performance metrics.
Replacement Considerations
RN2112MFV is the documented complementary PNP equivalent in the same package family.
FAQ
What is the nominal value of the internal base resistor?
The nominal value of the internal base resistor (R1) for the RN1112MFV is 22 kΩ.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) rating is 50 V.
Is this device qualified for automotive applications?
The datasheet indicates that the product is capable of PPAP and AEC-Q101 qualification upon request.
