RN1112(T5L,F,T)

RN1112(T5L,F,T)

  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-

SKU:3b4b472e558e Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSM

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RN1112(T5L,F,T)

Overview

The RN1112(T5L,F,T) is a single NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with internal biasing resistors within a compact SOT-416 (SSM) surface-mount package. Key electrical specifications include a collector-emitter maximum voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 100 mW. The device features a typical input resistance of 2.2 kOhms and a minimum DC current gain (hFE) of 30. It operates within a temperature range defined by its standard industrial classification.

Feature Summary

  • Integrates NPN transistor with built-in bias resistors to reduce external component count
  • Designed for high-speed switching applications in low-voltage logic circuits
  • Utilizes a compact SOT-416 surface-mount package for efficient PCB space utilization

Applications

  • Logic level shifting between different voltage domains
  • Driver circuits for small-signal loads in consumer electronics
  • Interface circuits for microcontroller I/O ports

Procurement Notes

Verify the specific suffix T5L,F,T against the manufacturer's latest datasheet to confirm packaging details and compliance status. Ensure the source document explicitly identifies this part number as a single NPN digital transistor with the stated electrical ratings before procurement.

Selection Notes

Select this component when a pre-biased NPN solution is required for space-constrained designs. Confirm that the 50V VCEO and 100mA IC ratings exceed the circuit's maximum operating conditions. Verify that the 2.2kOhm base resistor value aligns with the driving source's current capabilities.

Part Context

This component belongs to the RN111x series of digital transistors from Toshiba. These devices are engineered to simplify circuit design by replacing discrete resistor networks with a single integrated package. The series offers various resistor combinations to suit different logic families and drive requirements.

Replacement Considerations

Consult official cross-reference lists for compatible parts. Verify that any substitute maintains the same NPN polarity, SOT-416 footprint, and equivalent electrical parameters such as VCEO and hFE.

RN1112(T5L,F,T)RN1112(T5L,F,T)

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