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The RN1112(T5L,F,T) is a single NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with internal biasing resistors within a compact SOT-416 (SSM) surface-mount package. Key electrical specifications include a collector-emitter maximum voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 100 mW. The device features a typical input resistance of 2.2 kOhms and a minimum DC current gain (hFE) of 30. It operates within a temperature range defined by its standard industrial classification.
Verify the specific suffix T5L,F,T against the manufacturer's latest datasheet to confirm packaging details and compliance status. Ensure the source document explicitly identifies this part number as a single NPN digital transistor with the stated electrical ratings before procurement.
Select this component when a pre-biased NPN solution is required for space-constrained designs. Confirm that the 50V VCEO and 100mA IC ratings exceed the circuit's maximum operating conditions. Verify that the 2.2kOhm base resistor value aligns with the driving source's current capabilities.
This component belongs to the RN111x series of digital transistors from Toshiba. These devices are engineered to simplify circuit design by replacing discrete resistor networks with a single integrated package. The series offers various resistor combinations to suit different logic families and drive requirements.
Consult official cross-reference lists for compatible parts. Verify that any substitute maintains the same NPN polarity, SOT-416 footprint, and equivalent electrical parameters such as VCEO and hFE.