RN1112(TE85L,F)

Overview

The RN1112(TE85L,F) is a pre-biased NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with an internal base resistor, housed in the SSM-3 surface-mount package. Key electrical specifications include a collector-emitter voltage (Vceo) of 50 V, a continuous collector current of 100 mA, and a maximum power dissipation of 100 mW. The device features a typical input resistance of 10 kOhms, a minimum DC current gain (hfe) of 120, and a maximum operating frequency of 250 MHz. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates an NPN transistor with a built-in base resistor for simplified circuit design
• Optimized for high-speed switching applications with a maximum frequency of 250 MHz
• Designed for low-power consumption with a 100 mW power dissipation rating
• Utilizes compact SSM-3 surface-mount packaging for efficient board space utilization

Applications

• General-purpose signal switching circuits
• Logic level translation interfaces
• Driver stages for small-signal loads
• Battery protection circuits requiring compact form factors

Procurement Notes

Verify the specific suffix TE85L,F against official Toshiba documentation to confirm tape-and-reel packaging configuration. Ensure that the requested quantity aligns with standard reel sizes, typically 3000 units per reel, as partial reels may not be available from all distributors. Cross-reference the RoHS compliance status with the latest environmental declarations provided by the manufacturer to meet regulatory requirements for your specific region.

Selection Notes

Select this component when a single NPN switch with integrated biasing is required to reduce external component count. The 10 kOhm internal resistor simplifies base drive calculations compared to discrete transistors. Consider the 50 V voltage rating and 100 mA current limit to ensure adequate headroom for the intended load. The wide operating temperature range supports deployment in demanding industrial or automotive environments where thermal stability is critical for consistent performance.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which are designed to replace multiple discrete components. The SSM-3 package is a standard three-terminal surface-mount format used across various logic and analog switching applications. This series allows designers to minimize PCB area while maintaining reliable switching characteristics in compact consumer electronics and industrial control systems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.