RN1113ACT(TPL3)

RN1113ACT(TPL3)

$0.26
  • Description:TRANS PREBIAS NPN 50V 0.08A CST3
  • Series:-

SKU:abd0de1e0477 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.08A CST3
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):80 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:-
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-101, SOT-883
  • Supplier Device Package:CST3

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RN1113ACT(TPL3)

Overview

The RN1113ACT(TPL3) is a pre-biased digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with built-in bias resistors into a compact surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage of 50 V, a continuous collector current of 100 mA, and a DC current gain (hFE) minimum of 50 at 10 mA and 5 V. The device features a saturation voltage of 300 mV maximum at 250 µA base current and 5 mA collector current. Internal bias resistors are typically 10 kΩ for both R1 and R2. The component operates within a temperature range of -55°C to +150°C and has a maximum power dissipation of 100 mW.

Feature Summary

  • Integrates NPN transistor with dual bias resistors to reduce external component count
  • Designed for high-speed switching applications with low saturation voltage
  • Compact surface-mount packaging suitable for automated assembly

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix ACT(TPL3) against official Toshiba documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with RoHS directives if required by the target application. Cross-reference the manufacturer part number with authorized distributors to confirm current availability status and lead times before finalizing procurement plans.

Selection Notes

Select this component when a compact NPN digital transistor with integrated biasing is required for space-constrained designs. Verify that the 50 V collector-emitter voltage and 100 mA current ratings exceed the circuit requirements. Confirm that the SC-88 or SOT-323 package dimensions fit the PCB layout constraints. Check thermal dissipation capabilities relative to the expected operating conditions.

Part Context

The RN1113 series belongs to Toshiba's line of Bias Resistor Built-in Transistors (BRTs). These devices combine a single transistor with two internal resistors to simplify circuit design. The ACT(TPL3) suffix indicates a specific packaging and taping configuration used for surface-mount technology. This family is engineered to replace discrete resistor-transistor networks in modern electronic equipment.

Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic replacements may differ in hFE characteristics or internal resistor ratios. Verify pinout compatibility and package dimensions before substituting. Ensure alternative components meet the same voltage and current ratings.

RN1113ACT(TPL3)RN1113ACT(TPL3)
$0.26
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