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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SSM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：250 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SSM
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Overview
The RN1113,LF(CT is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates a base resistor of 47 kΩ with an open collector configuration to simplify circuit design. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a transition frequency of 250 MHz and a maximum power dissipation of 100 mW. It is housed in the SC-75 (SOT-416) surface-mount package.
Feature Summary
- Integrates a 47 kΩ base resistor for simplified biasing
- NPN configuration with open collector output
- Designed for high-speed switching applications
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the complete part number including suffixes such as LF(CT) to ensure correct packaging and lead-free compliance. Confirm that the SC-75 package matches the footprint requirements. Cross-reference the manufacturer datasheet for specific thermal and electrical limits before finalizing procurement.
Selection Notes
Select this component when a compact NPN solution with integrated base resistance is required. The 47 kΩ resistor value suits standard logic interface levels. Ensure the 50 V breakdown voltage and 100 mA current rating exceed the application's peak demands. The SOT-416 package is suitable for space-constrained surface-mount designs.
Part Context
This component belongs to Toshiba's series of Bias Resistor Built-in Transistors (BRT). These devices combine a single BJT with one or more resistors on a single silicon chip. The RN1113 specifically features a single base resistor, reducing external component count compared to discrete transistor solutions while maintaining reliable switching performance.
Replacement Considerations
Consult official substitution lists for compatible single NPN BRTs with similar 47 kΩ base resistance and 50 V ratings. Verify pinout compatibility and package dimensions before replacing. Generic equivalents may differ in transition frequency or saturation voltage.
