RN1113,LXHF(CT

Overview

The RN1113,LXHF(CT is a single NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates a bias resistor network within an SSM (SOT-416) surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a continuous collector current (IC) of -100 mA, and a power dissipation (Pd) of 100 mW. The device features a typical input resistance (R1) of 47 kOhms and a minimum DC current gain (hFE) of 120 at specified test conditions. It operates up to a maximum frequency of 250 MHz and supports junction temperatures up to +150°C. This component is designed for digital switching applications requiring compact footprint and simplified circuit design.

Feature Summary

• Integrates NPN transistor with built-in bias resistor network to reduce external component count.
• Utilizes SSM (SOT-416) surface-mount packaging for space-efficient board layout.
• Engineered for high-speed switching with a transition frequency of 250 MHz.
• Rated for automotive-grade reliability with AEC-Q101 qualification.

Applications

• Digital signal switching in automotive electronic control units.
• Level shifting and buffer circuits in consumer electronics.
• General-purpose switching applications in industrial control systems.

Procurement Notes

Verify the specific suffix LXHF(CT against the manufacturer's latest datasheet to confirm tape-and-reel specifications and moisture sensitivity level. Ensure compatibility with automated pick-and-place equipment regarding the SSM package dimensions. Cross-reference the AEC-Q101 qualification status if the application requires automotive-grade certification. Confirm RoHS compliance documentation is available for regulatory adherence.

Selection Notes

Select this component when a single NPN switch with integrated base biasing is required in a small outline package. Compare the 47 kOhm input resistance against circuit drive requirements to ensure adequate base current. Evaluate the 100 mA collector current limit against load demands. Consider the SSM package thermal characteristics for power dissipation management in dense PCB layouts.

Part Context

The RN1113 belongs to Toshiba's RN series of Bias Resistor Built-in Transistors (BRTs). These devices combine bipolar junction transistors with internal resistor networks to simplify driver circuit designs. The RN1113 specifically provides an NPN configuration with a 47 kOhm base resistor, offering a standardized solution for replacing discrete transistor-resistor combinations in digital logic interfaces.

Replacement Considerations

Potential substitutes include the DDTC144GE from Diodes Incorporated or the DTC114TET1G from onsemi. Verify pinout compatibility, electrical ratings, and package dimensions before substitution. Alternative Toshiba variants may exist with different resistor values or polarity configurations.