RN1113MFV,L3F

Overview

The RN1113MFV,L3F is a silicon NPN epitaxial type Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN transistor with an internal base resistor of 47 kΩ, designed to reduce component count and assembly costs in compact equipment. The device operates within a collector-emitter voltage range of up to 50 V and supports a continuous collector current of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at IC = 1 mA and a maximum collector-emitter saturation voltage of 0.3 V at IC = 5 mA. Power dissipation is rated at 150 mW when mounted on an FR4 board. The component is housed in the ultra-small SOT-723 (VESM) surface-mount package, weighing approximately 1.5 mg.

Feature Summary

• Integrates a bias resistor directly into the transistor structure to minimize external component requirements and simplify circuit design.
• Utilizes an ultra-small SOT-723 package optimized for high-density mounting applications.
• Features complementary polarity options available within the same series for flexible design implementation.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to ensure correct packaging configuration. Confirm that the requested quantity aligns with standard reel or cut-tape availability constraints defined by the manufacturer. Ensure compliance with RoHS directives and verify AEC-Q101 qualification status if automotive reliability standards are required for the target application environment.

Selection Notes

Select the RN1113MFV,L3F when a 47 kΩ input resistance is required for NPN switching applications. Compare the 47 kΩ value against other variants in the RN111x series to match specific drive current requirements. Ensure the 50 V voltage rating and 100 mA current capacity exceed the maximum operational loads of the target circuit to maintain adequate safety margins under varying temperature conditions.

Part Context

This component belongs to the RN11xxMFV series of Bias Resistor Built-in Transistors from Toshiba. It serves as the NPN counterpart to the PNP RN2113MFV. The series is engineered for general-purpose switching tasks where space efficiency and simplified bill-of-materials are critical design drivers.

Replacement Considerations

The RN2113MFV is the documented complementary PNP equivalent within the same product family. Verify pinout compatibility and resistor values before substituting with generic BRT components from other manufacturers.