RN1113(T5L,F,T)

RN1113(T5L,F,T)

$0.09
  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-

SKU:7d80137fec27 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSM

Download product information

RN1113(T5L,F,T)

Overview

The RN1113(T5L,F,T) is a single NPN bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with internal biasing resistors in a compact SOT-416-3 surface-mount package. The device features a collector-emitter maximum voltage of 50 V and a continuous collector current rating of 100 mA. Typical input resistance is specified at 10 kOhms, with a typical resistor ratio of 2.13. The component supports a power dissipation of 100 mW and offers a minimum DC current gain (hFE) of 30. It operates within a standard temperature range and is designed for space-efficient circuit applications requiring integrated biasing solutions.

Feature Summary

  • Integrates NPN transistor with built-in bias resistors to reduce external component count
  • Compact SMD/SMT packaging suitable for high-density board layouts
  • Simplified circuit design through pre-biased configuration

Applications

  • General-purpose switching circuits
  • Driver circuits for small loads
  • Logic level translation interfaces

Procurement Notes

Verify the specific suffix T5L,F,T against the manufacturer's latest datasheet to confirm tape-and-reel packaging specifications and lot traceability requirements. Ensure compatibility with automated pick-and-place equipment regarding the SOT-416-3 footprint dimensions. Cross-reference RoHS compliance status with current environmental declarations prior to final procurement authorization.

Selection Notes

Select this component when a single NPN switch with integrated base biasing is required in a minimal footprint. Verify that the 10 kOhm typical input resistance aligns with the driving source impedance. Confirm that the 50 V VCEO rating exceeds the maximum operating voltage in the target application. Consider the 100 mA Ic limit for load current requirements.

Part Context

This part belongs to the RN111x series of digital transistors from Toshiba. These components are designed to replace discrete resistor-transistor combinations, saving PCB area and assembly time. The RN1113 specifically denotes the NPN variant with defined internal resistor values, distinguishing it from PNP counterparts or other resistance configurations within the same family.

Replacement Considerations

Consult official Toshiba documentation for direct cross-references. Generic BRT equivalents may differ in hFE characteristics or internal resistor tolerances. Validate pinout compatibility between SOT-416 packages before substitution.

RN1113(T5L,F,T)RN1113(T5L,F,T)
$0.09
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