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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SSM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SSM
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Overview
The RN1114,LF is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It features a single NPN transistor integrated with two internal bias resistors within an S-Mini (TO-236-3, SC-59, SOT-23-3) surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical parameters include a minimum DC current gain (hFE) of 70 at 10mA and 5V, and a maximum Vce saturation voltage of 300mV at 250µA base current and 5mA collector current. The component has a maximum power dissipation of 200mW and a transition frequency of 250MHz.
Feature Summary
- Integrates a single NPN transistor with dual bias resistors to simplify circuit design and reduce component count.
- Optimized for high-speed switching applications with a transition frequency of 250MHz.
- Provides low saturation voltage characteristics suitable for efficient driver and interface circuits.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix and packaging configuration when sourcing, as availability may vary between cut tape, reel, or other formats. Confirm RoHS compliance status and ensure the component meets AEC-Q101 requirements if automotive qualification is necessary for the target application environment.
Selection Notes
Select this component for designs requiring a compact NPN BRT solution with integrated biasing. Ensure the required base resistance values match the internal resistor specifications of the RN1114 variant. Verify that the 50V voltage rating and 100mA current capacity are sufficient for the intended load conditions.
Part Context
The RN1114,LF belongs to Toshiba's digital transistor family, which combines bipolar junction transistors with built-in bias resistors. This integration reduces board space and manufacturing complexity compared to discrete resistor-transistor combinations. The part is designed for general-purpose switching and amplification tasks in consumer and industrial electronics.
Replacement Considerations
Cross-reference with equivalent NPN BRTs from other manufacturers such as ROHM (DTA series) or Diodes Incorporated (DDTC series). Ensure pinout compatibility and verify that electrical parameters like hFE and Vce(sat) meet or exceed the original specifications.
