RN1114MFV,L3F

Overview

The RN1114MFV,L3F is a pre-biased NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with internal bias resistors in a compact surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage of 50 V, a maximum continuous collector current of 100 mA, and a power dissipation rating of 150 mW. The device features a typical base resistor (R1) of 4.7 kOhms and an emitter-base resistor (R2) of 10 kOhms. It operates within a transition frequency of 250 MHz and maintains a DC current gain (hFE) of at least 50 under standard test conditions.

Feature Summary

• Integrates NPN BJT with dual bias resistors for simplified circuit design
• Optimized for high-speed switching applications with 250 MHz transition frequency
• Compact SOT-723 surface-mount packaging for space-constrained layouts

Applications

• General-purpose switching circuits
• Interface driver stages
• Logic level translation buffers

Procurement Notes

Verify the specific suffix L3F against the manufacturer's latest datasheet to confirm tape-and-reel specifications and lead-free compliance status. Confirm component availability as some variants may be designated as not recommended for new designs. Cross-reference the DigiKey part number RN1115MFVL3FTR-ND if exact stock matching is required, noting potential minor specification variances between similar model numbers.

Selection Notes

Select this component when a compact NPN switch with integrated biasing is required. Ensure the 50 V collector-emitter voltage rating exceeds the maximum circuit load. Verify that the 100 mA collector current limit accommodates the peak load requirements. Compare the 4.7 kOhm base resistance against the driving source impedance to ensure adequate saturation during logic high states.

Part Context

This component belongs to the RN11xx series of bias resistor built-in transistors from Toshiba. These devices are designed to replace discrete resistor-transistor networks, reducing board space and assembly costs. The RN1114 variant specifically utilizes a 4.7 kOhm base resistor configuration, distinguishing it from other series members like the RN1115 which uses a 2.2 kOhm base resistor.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Toshiba's official selection guide for direct equivalents or verify compatibility with generic SOT-723 NPN digital transistors having similar R1/R2 ratios.