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The RN1114(T5L,F,T) is a single NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with internal biasing resistors in a compact SOT-416-3 surface-mount package. The device features a collector-emitter maximum voltage of 50 V and a continuous collector current rating of 100 mA. Key electrical parameters include a typical input resistance of 2.2 kOhms, a typical resistor ratio of 2.13, and a minimum DC current gain (hFE) of 30. Power dissipation is rated at 100 mW, with an emitter-base voltage of 15 V.
Verify the specific suffix T5L,F,T against official Toshiba documentation to confirm reel quantity and tape specifications. Ensure RoHS compliance status matches current regulatory requirements for the target market. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Select this component when a single NPN configuration with a 2.2 kOhm base resistor is required. Confirm that the 50 V collector-emitter voltage and 100 mA current limits satisfy the circuit design constraints. Verify that the SOT-416-3 footprint aligns with the printed circuit board layout and thermal management requirements.
This part belongs to the RN111x series of pre-biased transistors from Toshiba. These devices are engineered to simplify circuit design by replacing discrete resistor networks. The RN1114 specifically denotes the NPN variant with a 2.2 kOhm input resistance, distinguishing it from other series members with different resistance values.
Consult Toshiba's official replacement guide for direct equivalents. Verify pinout compatibility and electrical parameter margins before substituting with components from other manufacturers.