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The RN1115,LF(CT is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors R1 (2.2 kOhms) and R2 (10 kOhms) within an SSM (SC-75, SOT-416) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a transition frequency of 250 MHz. The device features a minimum DC current gain (hFE) of 50 at 10 mA and 5 V, with a maximum saturation voltage of 300 mV at specific base and collector currents. Maximum power dissipation is rated at 100 mW.
Verify the complete part number including the suffix before ordering, as packaging options such as Cut Tape (CT), Tape and Reel (TR), or Digi-Reel may affect availability and handling requirements. Confirm that the specified resistor values match the design intent, as variations exist within the RN1115 family. Ensure compliance with RoHS directives if required by the target application environment.
Select this component when a compact NPN solution with fixed bias ratios is required. The 2.2 kOhm input resistance suits interfaces driven by standard logic levels. Compare against complementary PNP models like the RN2115 if push-pull configurations are needed. Verify thermal constraints, as the 100 mW power rating limits current handling in high-duty-cycle scenarios.
This device belongs to the Toshiba RN series of digital transistors, which combine bipolar junction transistors with internal biasing networks. The RN1115 specifically denotes an NPN configuration with defined resistor values. It is part of a broader portfolio designed to replace discrete resistor-transistor combinations in space-constrained PCB layouts.
Direct pin-compatible substitutes within the same manufacturer family include RN1114, RN1116, RN1117, and RN1118, provided their internal resistor values align with the circuit requirements. Cross-manufacturer replacements require verification of hFE, Vce(sat), and resistor tolerances.