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The RN1115,LXHF(CT is a dual digital transistor manufactured by Toshiba Semiconductor and Storage, housed in an SSM (US-6) surface-mount package. It integrates one NPN and one PNP bipolar junction transistor with built-in bias resistors. The device features a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Internal resistor values are typically 2.2 kOhms for R1 and 10 kOhms for R2. Key electrical parameters include a minimum DC current gain (hFE) of 80, a transition frequency of 250 MHz, and a power dissipation rating of 200 mW. The component is qualified under AEC-Q101 standards for automotive applications.
Verify the specific suffix LXHF(CT against official Toshiba documentation to confirm packaging type and tape-and-reel specifications. Ensure compatibility with automated pick-and-place equipment regarding the US-6 footprint dimensions. Confirm RoHS compliance status through the manufacturer's latest declaration before finalizing procurement orders.
Select this component when a symmetrical NPN/PNP pair with identical internal resistance ratios is required. The 2.2 kOhm base resistor suits standard logic interface applications. Verify that the 50 V breakdown voltage meets the system's maximum operating voltage requirements. Consider the 200 mW thermal dissipation limit for high-duty cycle operations.
This part belongs to Toshiba's RN series of pre-biased transistors designed to simplify digital circuit design. The LXHF variant indicates specific manufacturing and packaging attributes within the SSM case style. It serves as a direct replacement for discrete resistor-transistor networks, offering improved consistency and reduced assembly complexity compared to individual components.
Cross-reference with RN4985,LXHF(CT if different resistor values are acceptable. Check RN4905,LXHF(CT for alternative pinout or resistance configurations. Verify physical footprint compatibility with existing PCB layouts before substituting.