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The RN1116,LF(CT is a single NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors within an SSM (SC-75/SOT-416) surface-mount package. Key electrical parameters include a collector-emitter voltage of 50V, continuous collector current of 100mA, and power dissipation of 100mW. The device features a typical base resistor of 4.7kΩ, a minimum DC current gain of 50 at 10mA/5V, and a transition frequency of 200MHz.
Verify the specific suffix LF(CT against the manufacturer's official datasheet to confirm packaging details and compliance status. Ensure the ordering code matches the required tape-and-reel quantity. Cross-reference the AEC-Q101 qualification status if automotive reliability is required for the application.
Select this component when a single NPN pre-biased transistor with a 4.7kΩ base resistor is needed. Compare the 100mA current rating and 200MHz frequency against load requirements. Verify that the SSM package dimensions fit the PCB layout constraints compared to alternative packages like SOT-323 or SOT-723.
This part belongs to the RN11xx series of NPN digital transistors from Toshiba. It is functionally complementary to the RN2116 PNP counterpart. The series is designed to replace discrete resistor-transistor combinations, offering space savings and simplified manufacturing processes for embedded logic and interface applications.
Publicly confirmed substitutes include the DDTC144GE-7-F from Diodes Incorporated and the DTC114TET1G from onsemi. Verify pinout compatibility and exact resistor values before substitution.
The typical base resistor (R1) value is 4.7 kOhms.
Yes, the RN1116 series is AEC-Q101 qualified.
The maximum power dissipation is 100 mW.