RN1116,LF(CT

RN1116,LF(CT

$0.15
  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-

SKU:c6132bab8144 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSM

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RN1116,LF(CT

Overview

The RN1116,LF(CT is a single NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors within an SSM (SC-75/SOT-416) surface-mount package. Key electrical parameters include a collector-emitter voltage of 50V, continuous collector current of 100mA, and power dissipation of 100mW. The device features a typical base resistor of 4.7kΩ, a minimum DC current gain of 50 at 10mA/5V, and a transition frequency of 200MHz.

Feature Summary

  • Integrates built-in bias resistors to simplify circuit design and reduce component count.
  • Utilizes the PCT process for high-voltage and high-current performance.
  • Designed for compact mounting in ultra-small packages.

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific suffix LF(CT against the manufacturer's official datasheet to confirm packaging details and compliance status. Ensure the ordering code matches the required tape-and-reel quantity. Cross-reference the AEC-Q101 qualification status if automotive reliability is required for the application.

Selection Notes

Select this component when a single NPN pre-biased transistor with a 4.7kΩ base resistor is needed. Compare the 100mA current rating and 200MHz frequency against load requirements. Verify that the SSM package dimensions fit the PCB layout constraints compared to alternative packages like SOT-323 or SOT-723.

Part Context

This part belongs to the RN11xx series of NPN digital transistors from Toshiba. It is functionally complementary to the RN2116 PNP counterpart. The series is designed to replace discrete resistor-transistor combinations, offering space savings and simplified manufacturing processes for embedded logic and interface applications.

Replacement Considerations

Publicly confirmed substitutes include the DDTC144GE-7-F from Diodes Incorporated and the DTC114TET1G from onsemi. Verify pinout compatibility and exact resistor values before substitution.

FAQ

What is the typical value of the built-in base resistor?

The typical base resistor (R1) value is 4.7 kOhms.

Is this component qualified for automotive applications?

Yes, the RN1116 series is AEC-Q101 qualified.

What is the maximum power dissipation?

The maximum power dissipation is 100 mW.

RN1116,LF(CTRN1116,LF(CT
$0.15
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