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The RN1116,LXHF(CT is a PNP pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP transistor with internal bias resistors in an SSM (SOT-416) surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of -50 V, a continuous collector current (IC) of -100 mA, and a power dissipation (Pd) of 100 mW. The device features a typical base resistor (R1) of 4.7 kOhms and an emitter-base resistor (R2) of 10 kOhms. It offers a minimum DC current gain (hFE) of 50 at IC = -10 mA and VCE = -5 V, with a transition frequency (fT) of 200 MHz.
Verify the complete part number including suffixes such as LXHF(CT) to ensure correct packaging and compliance status. Confirm RoHS directives and automotive qualification requirements against specific project needs. Cross-reference datasheet revision dates to validate parameter consistency before finalizing procurement orders.
Select this component when a PNP configuration with integrated biasing is required for space-constrained designs. Ensure the 50 V voltage rating and 100 mA current capacity meet load requirements. Compare hFE and saturation voltage specifications against alternative models if specific gain or speed characteristics are critical for the application.
This part belongs to Toshiba's RN series of built-in bias resistor transistors. These devices replace discrete transistor-resistor networks, reducing component count and board space. The RN1116 specifically provides a PNP solution complementary to NPN variants like the RN1106 series, facilitating balanced design options in digital logic and signal processing stages.
Potential substitutes include other PNP pre-biased transistors from manufacturers such as Rohm (e.g., DTC143TE) or onsemi, provided they match the SOT-416 package, -50 V rating, and similar resistor values. Verify pinout compatibility and thermal performance before substitution.