RN1116,LXHF(CT

RN1116,LXHF(CT

$0.26
  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-

SKU:32100205d6ab Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:100 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSM

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RN1116,LXHF(CT

Overview

The RN1116,LXHF(CT is a PNP pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP transistor with internal bias resistors in an SSM (SOT-416) surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of -50 V, a continuous collector current (IC) of -100 mA, and a power dissipation (Pd) of 100 mW. The device features a typical base resistor (R1) of 4.7 kOhms and an emitter-base resistor (R2) of 10 kOhms. It offers a minimum DC current gain (hFE) of 50 at IC = -10 mA and VCE = -5 V, with a transition frequency (fT) of 200 MHz.

Feature Summary

  • Integrates PNP transistor with dual bias resistors for simplified circuit design
  • Optimized for switching, inverter, interface, and driver applications
  • Surface-mount SSM package suitable for automated assembly

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the complete part number including suffixes such as LXHF(CT) to ensure correct packaging and compliance status. Confirm RoHS directives and automotive qualification requirements against specific project needs. Cross-reference datasheet revision dates to validate parameter consistency before finalizing procurement orders.

Selection Notes

Select this component when a PNP configuration with integrated biasing is required for space-constrained designs. Ensure the 50 V voltage rating and 100 mA current capacity meet load requirements. Compare hFE and saturation voltage specifications against alternative models if specific gain or speed characteristics are critical for the application.

Part Context

This part belongs to Toshiba's RN series of built-in bias resistor transistors. These devices replace discrete transistor-resistor networks, reducing component count and board space. The RN1116 specifically provides a PNP solution complementary to NPN variants like the RN1106 series, facilitating balanced design options in digital logic and signal processing stages.

Replacement Considerations

Potential substitutes include other PNP pre-biased transistors from manufacturers such as Rohm (e.g., DTC143TE) or onsemi, provided they match the SOT-416 package, -50 V rating, and similar resistor values. Verify pinout compatibility and thermal performance before substitution.

RN1116,LXHF(CTRN1116,LXHF(CT
$0.26
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