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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN1116MFV,L3F is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with internal biasing resistors in a compact SOT-723 (VESM) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 150 mW. The device features a typical base resistor value of 4.7 kOhms and a typical resistance ratio of 0.47. It supports a maximum operating frequency of 250 MHz and meets AEC-Q101 automotive qualification standards.
Feature Summary
- Integrates NPN transistor with fixed bias resistors to simplify circuit design
- Automotive-grade reliability compliant with AEC-Q101 standards
- Compact SOT-723 surface-mount packaging for space-constrained applications
Applications
- Switching circuits in automotive electronic control units
- Interface connections between logic gates and loads
- Driver circuits for small-signal applications
Procurement Notes
Verify the complete part number including the L3F suffix to ensure correct tape-and-reel packaging configuration. Confirm AEC-Q101 compliance requirements against specific project automotive standards. Check datasheet revisions for any updates to thermal characteristics or recommended soldering profiles prior to procurement.
Selection Notes
Select this component when a single NPN switch with integrated biasing is required. Ensure the 4.7 kOhm base resistor aligns with the driving source impedance. Verify that the 50 V collector-emitter voltage exceeds the maximum circuit voltage. Consider the 150 mW power dissipation limit relative to ambient temperature derating curves.
Part Context
This component belongs to the RN1116MFV series of bias resistor built-in transistors. It shares the same package and general topology as related models like the RN1115 but differs in internal resistor values. The L3F suffix typically denotes specific packaging or marking variations within Toshiba's semiconductor portfolio.
Replacement Considerations
Direct substitutes must match the NPN polarity, 50 V rating, 100 mA current, and SOT-723 package. Verify equivalent base resistance values to maintain similar drive characteristics. Cross-reference with other Toshiba RN-series parts for pin-compatible alternatives.
