RN1116(TE85L,F)

RN1116(TE85L,F)

$0.20
  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-

SKU:8ecdf86483f4 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSM

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RN1116(TE85L,F)

Overview

The RN1116(TE85L,F) is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN epitaxial planar transistor with internal bias resistors in a compact SSM-3 surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) of 100 mW. The device features a typical base resistor (R1) of 4.7 kΩ and a minimum DC current gain (hFE) of 50. It operates within a temperature range of -55°C to +150°C and supports a maximum operating frequency of 250 MHz.

Feature Summary

  • Integrates a single NPN transistor with a built-in bias resistor to reduce component count and simplify circuit design.
  • Utilizes the SSM-3 surface-mount package for space-efficient implementation on printed circuit boards.
  • Engineered with an epitaxial planar structure to ensure stable switching performance and reliability.

Applications

  • Switching circuits requiring compact form factors
  • Inverter circuits for signal processing
  • Interface circuits connecting logic levels
  • Driver circuits for low-power loads

Procurement Notes

Verify the specific ordering suffix TE85L,F against the manufacturer's latest datasheet to confirm packaging details and compliance status. Ensure that the SSM-3 package footprint matches the target PCB layout. Confirm thermal management requirements align with the 100 mW power dissipation rating under expected operating conditions.

Selection Notes

Select this component when a single NPN switch with integrated biasing is required in a minimal footprint. Compare the 4.7 kΩ internal resistance against circuit drive requirements. Consider the 100 mA current limit and 50 V voltage rating for compatibility with load specifications. Evaluate the SSM-3 package availability against alternative pin-compatible options if supply constraints exist.

Part Context

This part belongs to the RN1116 series of bias resistor built-in transistors from Toshiba. The series offers various resistance combinations for NPN configurations. The TE85L,F suffix typically denotes the tape-and-reel packaging format used for automated assembly processes in high-volume manufacturing environments.

Replacement Considerations

Direct substitutes must match the NPN polarity, 50V/100mA ratings, SSM-3 package, and 4.7kΩ base resistance. Verify equivalent hFE and power dissipation characteristics before substitution.

RN1116(TE85L,F)RN1116(TE85L,F)
$0.20
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