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The RN1116(TE85L,F) is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN epitaxial planar transistor with internal bias resistors in a compact SSM-3 surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) of 100 mW. The device features a typical base resistor (R1) of 4.7 kΩ and a minimum DC current gain (hFE) of 50. It operates within a temperature range of -55°C to +150°C and supports a maximum operating frequency of 250 MHz.
Verify the specific ordering suffix TE85L,F against the manufacturer's latest datasheet to confirm packaging details and compliance status. Ensure that the SSM-3 package footprint matches the target PCB layout. Confirm thermal management requirements align with the 100 mW power dissipation rating under expected operating conditions.
Select this component when a single NPN switch with integrated biasing is required in a minimal footprint. Compare the 4.7 kΩ internal resistance against circuit drive requirements. Consider the 100 mA current limit and 50 V voltage rating for compatibility with load specifications. Evaluate the SSM-3 package availability against alternative pin-compatible options if supply constraints exist.
This part belongs to the RN1116 series of bias resistor built-in transistors from Toshiba. The series offers various resistance combinations for NPN configurations. The TE85L,F suffix typically denotes the tape-and-reel packaging format used for automated assembly processes in high-volume manufacturing environments.
Direct substitutes must match the NPN polarity, 50V/100mA ratings, SSM-3 package, and 4.7kΩ base resistance. Verify equivalent hFE and power dissipation characteristics before substitution.