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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN1117MFV,L3F is a single NPN bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with internal bias resistors in a compact SOT-723 surface-mount package. The device features a typical input resistance of 10 kOhms and a typical resistor ratio of 2.13. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation of 150 mW. It meets AEC-Q101 automotive qualification standards and supports a maximum operating temperature of +150°C.
Feature Summary
- Integrates NPN transistor with bias resistors to reduce component count and simplify circuit design
- Automotive-grade reliability certified under AEC-Q101 standards for enhanced durability
- Compact SOT-723 surface-mount package optimized for space-constrained applications
Applications
- Switching circuits in automotive electronic control units
- Inverter driver circuits requiring integrated biasing
- Interface connection logic level translation
- General-purpose digital switching applications
Procurement Notes
Verify the complete part number including the L3F suffix to ensure correct packaging configuration. Confirm AEC-Q101 compliance requirements if the application demands automotive-grade certification. Check the latest datasheet for specific handling precautions related to the SOT-723 package dimensions and thermal characteristics during assembly.
Selection Notes
Select this component when a single NPN switch with fixed biasing is required. Ensure the 10 kOhm input resistance matches the driving source impedance. Verify that the 50 V voltage rating and 100 mA current capacity exceed the circuit's peak operational demands. Consider the SOT-723 footprint compatibility with existing PCB layouts.
Part Context
This component belongs to the RN1117MFV series of bias resistor built-in transistors. It serves as the NPN variant within a family that includes complementary PNP devices such as the RN2117MFV. The series is designed to replace discrete resistor-transistor combinations, offering a standardized solution for digital switching tasks across consumer and industrial electronics.
Replacement Considerations
The RN2117MFV is documented as the complementary product. Verify pinout compatibility and polarity differences before substitution. No other direct substitutes are confirmed in the provided documentation.
