RN1117(T5L,F,T)

RN1117(T5L,F,T)

  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-

SKU:bd0f64ea5496 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSM

Download product information

RN1117(T5L,F,T)

Overview

The RN1117(T5L,F,T) is a single NPN digital transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with internal bias resistors in a compact SOT-416-3 surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) of 100 mW. The device features a typical input resistance of 10 kOhms and a resistor ratio of 2.13. It offers a minimum DC current gain (hFE) of 30 and an emitter-base voltage (VEBO) of 15 V.

Feature Summary

  • Integrates a single NPN transistor with built-in bias resistors to simplify circuit design.
  • Utilizes a small SOT-416-3 surface-mount package for space-constrained applications.
  • Provides stable switching characteristics with defined input resistance and current gain.

Applications

  • General-purpose switching circuits
  • Driver circuits for low-current loads
  • Logic level translation interfaces

Procurement Notes

Verify the specific ordering suffix T5L,F,T against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure compatibility with RoHS directives if required by the target application. Cross-reference the Mouser part number 757-RN1117T5LFT for distributor availability checks. Confirm that the 100 mW power dissipation rating aligns with the thermal management capabilities of the final PCB layout.

Selection Notes

Select this component when a single NPN switch with integrated base biasing is required in a small footprint. The 10 kOhm input resistance suits standard logic levels. Compare the 100 mA current limit and 50 V voltage rating against load requirements. Consider the SOT-416-3 package dimensions for board space constraints. Verify thermal performance under continuous operation within the 100 mW dissipation limit.

Part Context

This component belongs to the RN1117 series of digital transistors from Toshiba. It is distinct from other series members like the RN1117MFV which uses an SOT-723 package and offers higher power dissipation. The RN1117(T5L,F,T) specifically denotes the SOT-416-3 variant with specific packaging configurations.

Replacement Considerations

Direct substitutes must match the NPN polarity, 50 V VCEO, 100 mA IC, and 10 kOhm input resistance. Alternative packages such as SOT-723 may require schematic review due to pinout or thermal differences. Verify equivalent hFE and VEBO ratings before substitution.

RN1117(T5L,F,T)RN1117(T5L,F,T)

Click on the inquiry