RN1117(TE85L,F)

Overview

The RN1117(TE85L,F) is a single NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with built-in bias resistors in an SOT-416-3 (SSM-3) surface-mount package. The device features a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 30, a typical input resistance of 10 kOhms, and a resistor ratio of 2.13. It operates within a temperature range of -55°C to +150°C with a power dissipation of 100 mW.

Feature Summary

• Integrates NPN transistor with dual bias resistors for simplified circuit design
• Provides high current gain suitable for switching applications
• Optimized for low-power consumption in compact surface-mount packages

Applications

• General-purpose signal switching
• Driver circuits for small loads
• Logic level translation interfaces

Procurement Notes

Verify the specific suffix TE85L,F against official Toshiba documentation to confirm packaging type and reel specifications. Ensure compatibility with standard SMD reflow profiles. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before finalizing procurement orders.

Selection Notes

Select this component when a single NPN switch with integrated base biasing is required. The 10 kOhm input resistance matches standard logic outputs. Consider the SOT-416-3 footprint constraints and thermal dissipation limits relative to the application's duty cycle and ambient temperature conditions.

Part Context

This part belongs to the RN1117 series of Bias Resistor Built-In Transistors (BRTs). It shares functional similarities with other single NPN BRTs but differs in package geometry and specific internal resistor ratios. The TE85L,F suffix indicates the specific tape-and-reel packaging configuration used for automated assembly processes.

Replacement Considerations

Direct substitutes must match the NPN polarity, 50V VCEO rating, 100mA IC limit, and SOT-416-3 package. Verify that alternative components maintain similar hFE characteristics and internal resistor values to ensure circuit stability without redesign.