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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN1118MFV,L3F is a single NPN bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with internal biasing resistors in a compact SOT-723 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 150 mW. The device features a typical input resistance of 47 kOhms and a typical resistor ratio of 4.7. It offers a minimum DC current gain (hFE) of 50 at specified conditions and supports a maximum operating frequency of 250 MHz. The component is qualified under AEC-Q101 standards for automotive reliability.
Feature Summary
- Integrates NPN transistor with dual bias resistors to simplify circuit design
- AEC-Q101 qualified for automotive application reliability
- Compact SOT-723 surface-mount packaging for space-constrained designs
Applications
- Automotive electronic control units requiring pre-biased switching
- General-purpose digital logic level translation
- Driver circuits for low-power loads in consumer electronics
Procurement Notes
Verify the complete part number including the L3F suffix to ensure correct tape-and-reel packaging configuration. Confirm AEC-Q101 qualification status if the application requires automotive-grade reliability standards. Check RoHS compliance documentation against specific regional regulatory requirements before finalizing procurement orders.
Selection Notes
Select this component when a single NPN switch with integrated base biasing is required. The 47 kOhm input resistance suits standard logic interface applications. Ensure the 50 V collector-emitter voltage rating exceeds the maximum circuit voltage. Verify that the 100 mA current capacity meets load requirements. Consider the complementary PNP device RN2118MFV for push-pull configurations.
Part Context
This component belongs to the RN1118 series of bias resistor built-in transistors. It serves as the NPN counterpart to the PN2118 or RN2118MFV PNP devices. The MFV suffix indicates the specific SOT-723 (VESM) package type. The L3F suffix denotes the specific reel packaging format used by Toshiba Semiconductor and Storage for distribution.
Replacement Considerations
Publicly confirmed complementary substitute: RN2118MFV,L3F (PNP version). No other direct cross-brand substitutes are verified in the provided source data.
