RN1118(T5L,F,T)

Overview

The RN1118(T5L,F,T) is a single NPN digital transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with internal bias resistors in a compact SOT-416-3 surface-mount package. Key electrical specifications include a collector-emitter maximum voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 100 mW. The device features a typical input base resistor of 2.2 kOhms and a typical resistance ratio of 2.13. It operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

• Integrates a single NPN transistor with built-in bias resistors to reduce external component count.
• Designed for high-speed switching applications with optimized internal resistance configuration.
• Utilizes a small SOT-416-3 surface-mount package suitable for space-constrained PCB layouts.

Applications

• General-purpose logic level shifting and interface circuits
• Driver stages for relays, solenoids, or small motors
• Switching elements in portable battery-powered devices

Procurement Notes

Verify the specific suffix T5L,F,T against the manufacturer's latest datasheet to confirm tape-and-reel packaging quantities and RoHS compliance status. Ensure the ordering part number matches the exact resistance values and package type required for the design. Cross-reference with official Toshiba distribution channels to confirm current production status and availability.

Selection Notes

Select this component when a single NPN switch with integrated base biasing is required. The 2.2 kOhm typical base resistor suits applications driven by standard logic outputs. Verify that the 100 mA collector current and 50 V breakdown voltage exceed the circuit's maximum load requirements. Consider the SOT-416-3 thermal characteristics for power dissipation limits under ambient conditions.

Part Context

This part belongs to the RN111x series of pre-biased transistors from Toshiba. These components are designed to replace discrete resistor-transistor networks, simplifying schematic design and reducing assembly costs. The RN1118 variant specifically provides a lower base resistance compared to higher-resistance variants like the RN1117, offering different drive characteristics for interfacing with various logic families.

Replacement Considerations

Publicly confirmed substitute part numbers were not identified in the provided source material. Consult Toshiba's official replacement guide or distributor cross-reference tools for verified equivalents.