RN1118(TE85L,F)

RN1118(TE85L,F)

$0.25
  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-

SKU:4eceb8ac0a03 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SSM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSM

Download product information

RN1118(TE85L,F)

Overview

The RN1118(TE85L,F) is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates an internal base resistor within the SSM-3 (SC-75/SOT-416) surface-mount package. Key electrical specifications include a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a transition frequency of 250 MHz. The device features a minimum DC current gain of 50 at 10 mA and 5 V, with a power dissipation rating of 100 mW. It operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates a single NPN transistor with an internal bias resistor for simplified circuit design
  • Optimized for high-speed switching applications with a 250 MHz transition frequency
  • Compact surface-mount packaging suitable for space-constrained PCB layouts

Applications

  • General-purpose switching circuits
  • Driver circuits for low-power loads
  • Interface logic level translation

Procurement Notes

Verify the complete part number including the TE85L suffix to ensure correct tape-and-reel packaging configuration. Confirm RoHS compliance status through official Toshiba documentation prior to integration. Cross-reference the specific datasheet revision to validate electrical characteristics against your design requirements. Ensure storage conditions adhere to moisture sensitivity levels defined in the manufacturer's handling guidelines.

Selection Notes

Select this component when a compact solution is required for switching applications involving NPN logic interfacing. The integrated resistor eliminates external components, reducing board space and assembly complexity. Consider the 100 mA current limit and 50 V voltage rating to ensure operation remains within safe limits. Evaluate thermal management needs given the 100 mW power dissipation constraint in the small SSM-3 package.

Part Context

This device belongs to Toshiba's RN series of pre-biased transistors, designed to replace discrete resistor-transistor combinations. The SSM-3 package provides a standardized footprint compatible with various automated pick-and-place systems. It serves as a direct replacement for older discrete configurations requiring a single NPN switch with fixed biasing.

Replacement Considerations

Direct substitutes may include other manufacturers' single NPN pre-biased transistors in SC-75 packages with matching 50V/100mA ratings. Verify pinout compatibility and internal resistance values before substitution. Alternative packages like SOT-23 may require schematic redesign.

RN1118(TE85L,F)RN1118(TE85L,F)
$0.25
Buy Now