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The RN1118(TE85L,F) is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates an internal base resistor within the SSM-3 (SC-75/SOT-416) surface-mount package. Key electrical specifications include a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a transition frequency of 250 MHz. The device features a minimum DC current gain of 50 at 10 mA and 5 V, with a power dissipation rating of 100 mW. It operates within a temperature range of -55°C to +150°C.
Verify the complete part number including the TE85L suffix to ensure correct tape-and-reel packaging configuration. Confirm RoHS compliance status through official Toshiba documentation prior to integration. Cross-reference the specific datasheet revision to validate electrical characteristics against your design requirements. Ensure storage conditions adhere to moisture sensitivity levels defined in the manufacturer's handling guidelines.
Select this component when a compact solution is required for switching applications involving NPN logic interfacing. The integrated resistor eliminates external components, reducing board space and assembly complexity. Consider the 100 mA current limit and 50 V voltage rating to ensure operation remains within safe limits. Evaluate thermal management needs given the 100 mW power dissipation constraint in the small SSM-3 package.
This device belongs to Toshiba's RN series of pre-biased transistors, designed to replace discrete resistor-transistor combinations. The SSM-3 package provides a standardized footprint compatible with various automated pick-and-place systems. It serves as a direct replacement for older discrete configurations requiring a single NPN switch with fixed biasing.
Direct substitutes may include other manufacturers' single NPN pre-biased transistors in SC-75 packages with matching 50V/100mA ratings. Verify pinout compatibility and internal resistance values before substitution. Alternative packages like SOT-23 may require schematic redesign.