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The RN1119MFV,L3F is a single NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors within a compact SOT-723 (VESM) surface-mount package. The device features a typical input resistance of 1 kOhm, a maximum collector-emitter voltage (VCEO) of 50 V, and a continuous collector current rating of 100 mA. Key electrical specifications include a minimum DC current gain (hFE) of 120, a power dissipation capacity of 150 mW, and an emitter-base voltage (VEBO) of 5 V. It supports operation up to a maximum junction temperature of +150 C and holds AEC-Q101 qualification for automotive reliability.
Verify the specific ordering suffix against official Toshiba documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the AEC-Q101 automotive qualification status aligns with project requirements. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component when a single NPN configuration with a 1 kOhm base resistor is required. Ensure the 50 V voltage rating and 100 mA current limit meet the load demands. Consider the SOT-723 footprint constraints during PCB layout. Verify thermal management capabilities given the 150 mW power dissipation limit in the target application environment.
This part belongs to the RN1119 series of bias resistor built-in transistors from Toshiba. It is designed as a replacement for discrete BJT and resistor combinations. The series offers various resistance ratios and polarities to support diverse switching and amplification needs in consumer and automotive electronics.
Check for direct cross-reference part numbers from Toshiba's official substitution guide. Verify pinout compatibility and electrical parameter equivalence for any alternative suppliers. Ensure the replacement maintains the same SOT-723 package dimensions and thermal characteristics.