RN1130MFV,L3F

$0.15

Description：TRANS PREBIAS NPN 50V 0.1A VESM
Series：-

SKU:83115ce8f155 Category: Single, Pre-Biased Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN 50V 0.1A VESM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 and R2
Transistor Type：NPN - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：100 kOhms
Resistor - Emitter Base (R2)：100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：250 MHz
Power - Max：150 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SOT-723
Supplier Device Package：VESM

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RN1130MFV,L3F

Overview

The RN1130MFV,L3F is a single NPN digital transistor from Toshiba, featuring built-in bias resistors. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device has a power dissipation rating of 150 mW and a transition frequency of 250 MHz. It includes an internal base resistor (R1) of 47 kOhms. The component is housed in a SOT-723 package and meets AEC-Q101 automotive qualification standards.

Feature Summary

Integrates NPN bipolar transistor with a single 47 kOhm base bias resistor for simplified circuit design
Automotive-grade reliability certified under AEC-Q101 standards for robust performance
High-speed switching capability supported by a 250 MHz transition frequency
Compact surface-mount construction in a SOT-723 package for space-constrained applications

Applications

General-purpose signal switching in automotive electronic control units
Driver circuits for low-power loads in industrial equipment
Logic level translation between microcontrollers and peripheral devices
Switching elements in consumer electronics power management systems

Procurement Notes

Verify the specific suffix L3F to confirm packaging configuration and reel specifications. Ensure the procurement source provides valid traceability documentation for AEC-Q101 compliance. Cross-reference the manufacturer part number against official Toshiba distribution channels to avoid counterfeit components. Confirm storage conditions align with moisture sensitivity levels defined in the datasheet.

Selection Notes

Select this component when a single NPN switch with integrated biasing is required. The 47 kOhm resistor value suits standard logic interface applications. Consider the 50 V breakdown voltage for low-voltage DC circuits. Evaluate the SOT-723 footprint against available PCB real estate. Compare thermal dissipation requirements against the 150 mW limit for high-duty cycle operations.

Part Context

This part belongs to the RN11xx series of pre-biased transistors designed by Toshiba Semiconductor and Storage. These devices combine discrete transistors and resistors into a single package to reduce board space and assembly costs. The RN1130 variant specifically utilizes an NPN configuration with a fixed base resistor, distinguishing it from other series members that may offer different resistance values or PNP polarities.