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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：100 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN1131MFV,L3F is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It features an NPN transistor configuration with a single internal connection housed in a SOT-723 surface-mount package. The device integrates a base resistor (R1) of 10 kOhms to simplify circuit design. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (Ic) of 100 mA, and a power dissipation (Pd) of 150 mW. The component meets AEC-Q101 automotive qualification standards.
Feature Summary
- Integrates a bias resistor directly with the transistor to reduce external component count and PCB space.
- Automotive-grade reliability certified under AEC-Q101 standards for robust performance.
- Compact SOT-723 surface-mount package designed for high-density mounting applications.
Applications
- Switching circuits in automotive electronic control units.
- Interface connections between logic gates and drivers.
- Driver circuits for low-power loads requiring simplified biasing.
Procurement Notes
Verify the specific suffix L3F against the manufacturer's latest datasheet to confirm packaging details such as reel size or tape specifications. Ensure the ordering part number matches the required resistance value and polarity. Confirm AEC-Q101 compliance requirements if the application mandates automotive-grade components. Cross-reference the supplier's documentation for any recent changes in manufacturing location or quality certifications.
Selection Notes
Select this component when a compact NPN digital transistor with a 10 kOhm base resistor is required. Compare the 50 V voltage rating and 100 mA current capacity against the load requirements. Consider the complementary PNP model RN2131MFV if a matching pair is needed. Evaluate the SOT-723 footprint constraints against available board space. Verify thermal management needs given the 150 mW power dissipation limit.
Part Context
This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors. These devices are designed to replace discrete resistor-transistor combinations, offering space savings and improved switching consistency. The series includes various resistance values and polarities to support diverse general-purpose switching and interface applications across industrial and automotive sectors.
Replacement Considerations
The complementary PNP equivalent within the same series is the RN2131MFV,L3F. Designers requiring a matched pair for push-pull configurations should verify the pinout compatibility between the NPN RN1131 and PNP RN2131 variants in the SOT-723 package.
