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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：100 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN1131MFV(TL3,T) is a PNP bias resistor built-in transistor (digital transistor) manufactured by Toshiba Semiconductor and Storage. It integrates a single base resistor (R1) with a PNP bipolar junction transistor in a compact surface-mount package. The device features a collector-emitter breakdown voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. The typical input resistance is 47 kOhms. It operates within a temperature range of -55°C to +150°C and is qualified under AEC-Q101 standards for automotive applications.
Feature Summary
- Integrates a PNP BJT with an internal base resistor to simplify circuit design and reduce component count.
- AEC-Q101 qualified for high reliability in automotive electronic systems.
- Compact SOT-723 (VESM) package suitable for space-constrained printed circuit board layouts.
Applications
- Automotive infotainment and control unit logic switching
- General-purpose digital signal level shifting
- Switching applications in industrial equipment
Procurement Notes
Verify the specific ordering suffix TL3 against the manufacturer's official documentation to confirm packaging details and tape-and-reel specifications. Ensure the component meets RoHS directives and AEC-Q101 automotive qualification requirements relevant to the target application environment before finalizing procurement.
Selection Notes
Select this component when a PNP configuration with a 47 kOhm base resistor is required. Verify that the 50 V collector-emitter voltage and 100 mA current ratings exceed the maximum operational loads. Confirm compatibility with the SOT-723 footprint during the PCB layout phase.
Part Context
This part belongs to Toshiba's RN series of bias resistor built-in transistors, designed to replace discrete resistor-transistor networks. The RN1131 variant specifically provides a PNP structure with a single integrated base resistor, distinguishing it from NPN variants or dual-resistor models within the same family.
Replacement Considerations
Consult official cross-reference data for direct pin-compatible substitutes. Generic equivalents may differ in hFE characteristics or saturation voltage; verify electrical parameters against the original datasheet specifications before substitution.
FAQ
What is the internal resistor configuration for the RN1131?
The RN1131 integrates a single base resistor (R1) with a value of typically 47 kOhms. It does not include an emitter-base resistor (R2).
Is the RN1131MFV(TL3,T) suitable for automotive applications?
Yes, the component is qualified under the AEC-Q101 standard, indicating compliance with automotive reliability requirements.
What is the maximum operating temperature for this device?
The maximum operating junction temperature for the RN1131MFV(TL3,T) is 150°C.
