RN1132MFV,L3F

Overview

The RN1132MFV,L3F is a single NPN bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN silicon epitaxial planar transistor with two internal resistors within a compact SOT-723 (VESM) surface-mount package. The device features a collector-emitter breakdown voltage of 50 V and a continuous collector current rating of 100 mA, with a maximum power dissipation of 150 mW. Key electrical parameters include a base resistor (R1) of 4.7 kOhms and an emitter-base resistor (R2) of 10 kOhms. The component exhibits a DC current gain (hFE) of at least 100 at 10 mA and 5 V, ensuring reliable switching performance in digital logic applications.

Feature Summary

• Integrates NPN transistor with dual bias resistors to simplify circuit design
• Utilizes ultra-small SOT-723 surface-mount packaging for space-constrained layouts
• Provides high current gain for efficient signal amplification and switching

Applications

• Digital logic interface circuits between microcontrollers and peripheral devices
• Level shifting and buffer stages in portable electronic equipment
• Switching applications in automotive control modules requiring AEC-Q101 qualification

Procurement Notes

Verify the specific L3F suffix against the official Toshiba datasheet to confirm tape-and-reel specifications and environmental compliance status. Ensure that the SOT-723 footprint matches your PCB land pattern dimensions precisely. Confirm availability status as distribution channels may vary for this specific part number.

Selection Notes

Select this component when a single NPN BRT with a 4.7 kOhm base resistor and 10 kOhm emitter resistor is required. Compare hFE minimums and saturation voltages against alternative BRT series if specific gain characteristics are critical. Verify thermal management requirements given the 150 mW power dissipation limit in the small VESM package.

Part Context

This part belongs to the RN11xx series of bias resistor built-in transistors from Toshiba. These devices are designed to replace discrete transistor-resistor combinations, reducing component count and assembly costs. The RN1132 variant specifically offers a moderate input resistance ratio suitable for general-purpose digital switching tasks.

Replacement Considerations

Consult Toshiba's official cross-reference documentation for verified substitutes. Potential alternatives include other NPN BRTs with similar R1/R2 ratios and 50V ratings from compatible manufacturers, provided pinouts and electrical limits match.