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The RN1301,LF is a single NPN pre-biased bipolar transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors with a typical value of 4.7 kΩ for both base and emitter connections. The device features a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. Key electrical specifications include a minimum DC current gain (hFE) of 30 at 10 mA and 5 V, and a transition frequency of 250 MHz. Power dissipation is rated at 100 mW, with a maximum operating temperature of +150°C. The component is housed in the USM-3 surface-mount package.
Verify the specific suffix against official Toshiba documentation to confirm exact resistor values and packaging type. Ensure the requested variant matches the required USM-3 package dimensions and thermal characteristics. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm RoHS compliance status and availability. Confirm that the integrated resistor tolerances meet the specific circuit requirements before finalizing procurement orders.
Select this component when a compact single NPN solution with integrated biasing is required. The 4.7 kΩ internal resistors reduce external component count and board space. Consider the 50 V rating and 100 mA current limit for low-power switching tasks. The USM-3 package offers a small footprint suitable for dense surface-mount designs. Verify thermal management needs given the 100 mW power dissipation rating.
The RN1301 belongs to Toshiba's Bipolar Transistor Built-in Resistor (BRT) series. This family combines NPN transistors with internal bias networks to replace discrete resistor-transistor combinations. The RN1301 specifically provides a single NPN configuration, distinguishing it from dual or PNP variants within the same product line. It is designed for general-purpose applications requiring simplified biasing schemes.
The typical resistance values for both the base and emitter resistors are 4.7 kΩ.
The maximum operating temperature is specified as +150°C.