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The RN1301,LXHF is a single NPN Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates internal bias resistors with a typical ratio of 1, specifically R1=4.7 kΩ and R2=4.7 kΩ. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. It operates at a maximum frequency of 250 MHz with a power dissipation of 100 mW. The component is housed in an SMD/USM-3 package and complies with AEC-Q automotive standards.
Verify the specific suffix LXHF against the manufacturer's official datasheet to confirm packaging details and compliance status. Ensure the procurement channel provides valid traceability documentation for automotive-grade components. Cross-reference the part number with authorized distributors to confirm availability and authenticity before finalizing orders.
Select this component when a compact NPN solution with integrated biasing is required for space-constrained designs. The USM-3 package offers a small footprint suitable for surface mount applications. Consider the 50 V voltage rating and 100 mA current limit to ensure compatibility with the target load requirements and operating conditions.
This part belongs to Toshiba’s RN series of Bias Resistor Built-in Transistors. These devices combine bipolar transistors with internal resistors to reduce board space and assembly costs. The RN1301,LXHF variant is specifically designed for general-purpose applications requiring reliable switching performance in automotive and industrial environments.
Consult official substitution lists for compatible NPN BRTs with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics before replacing the original component in existing designs.