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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC70
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70
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Overview
The RN1303,LF is a single NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN epitaxial silicon transistor with built-in bias resistors in a compact S-Mini (SOT-23) surface-mount package. Key electrical parameters include a maximum collector-emitter voltage of 50V, a continuous collector current of 100mA, and a maximum power dissipation of 200mW. The device features a minimum DC current gain (hFE) of 70 at 10mA and 5V, with a base resistor (R1) value of 22 kOhms. It operates at a transition frequency of 250MHz and has a maximum collector cutoff current of 500nA.
Feature Summary
- Integrates NPN transistor with built-in bias resistors to simplify circuit design
- Reduces component count and manufacturing process steps
- Utilizes PCT process for silicon epitaxial type construction
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix and packaging configuration when sourcing. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the part number matches the exact required resistance values and package type for your design.
Selection Notes
Select this component for applications requiring a single NPN switching element with integrated biasing. Compare against complementary PNP models like the RN2301 series if both polarities are needed. Verify that the 22kOhm base resistance and 50V rating align with the target circuit requirements.
Part Context
The RN1303 belongs to Toshiba's RN series of digital transistors, which combine bipolar junction transistors with internal bias resistors. This series is designed to replace discrete resistor-transistor networks, offering space savings and improved consistency in high-volume consumer and industrial electronics manufacturing.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Designers should consult official cross-reference lists from Toshiba Semiconductor and Storage for verified alternatives.
