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The RN1303(TE85L,F) is a dual NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal bias resistors into a compact surface-mount package, designed to simplify circuit design and reduce component count. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 70 and a maximum operating frequency of 250 MHz. The typical input resistance is 2.2 kΩ, with a power dissipation rating of 200 mW. It operates within a temperature range of -55°C to +150°C.
Verify the specific suffix TE85L,F against official Toshiba documentation to confirm packaging type and tape-and-reel specifications. Ensure compatibility with RoHS directives if required by your manufacturing standards. Cross-reference the Mouser or DigiKey part numbers for accurate sourcing channels. Confirm lead times directly with authorized distributors as availability fluctuates.
Select this component when a dual NPN configuration with integrated biasing is required to save board space. Compare the 2.2 kΩ input resistance against other RN series variants like RN1301 or RN1302 if different base drive characteristics are needed. Ensure the 50 V VCEO rating exceeds the maximum voltage in your application circuit.
The RN1303 belongs to Toshiba's RN series of Bias Resistor Built-In Transistors (BRBTs). These devices combine transistors and resistors to replace multiple discrete components. The TE85L,F suffix typically denotes a specific reel packaging format used for automated surface-mount assembly processes.
Consult Toshiba datasheets for direct equivalents within the RN series, such as RN1301 or RN1302, which share similar packages but differ in resistor values. Third-party replacements require matching pinout, VCEO, IC, and hFE specifications to ensure functional parity without redesigning the surrounding circuitry.