RN1303(TE85L,F)

RN1303(TE85L,F)

  • Description:TRANS PREBIAS NPN 50V 0.1A SC70
  • Series:-

SKU:bd2ba5ac4612 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SC70
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70

Download product information

RN1303(TE85L,F)

Overview

The RN1303(TE85L,F) is a dual NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal bias resistors into a compact surface-mount package, designed to simplify circuit design and reduce component count. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 70 and a maximum operating frequency of 250 MHz. The typical input resistance is 2.2 kΩ, with a power dissipation rating of 200 mW. It operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors to minimize external components.
  • Optimized for switching, inverter, interface, and driver circuits.
  • Supports high-frequency operation up to 250 MHz.

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific suffix TE85L,F against official Toshiba documentation to confirm packaging type and tape-and-reel specifications. Ensure compatibility with RoHS directives if required by your manufacturing standards. Cross-reference the Mouser or DigiKey part numbers for accurate sourcing channels. Confirm lead times directly with authorized distributors as availability fluctuates.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to save board space. Compare the 2.2 kΩ input resistance against other RN series variants like RN1301 or RN1302 if different base drive characteristics are needed. Ensure the 50 V VCEO rating exceeds the maximum voltage in your application circuit.

Part Context

The RN1303 belongs to Toshiba's RN series of Bias Resistor Built-In Transistors (BRBTs). These devices combine transistors and resistors to replace multiple discrete components. The TE85L,F suffix typically denotes a specific reel packaging format used for automated surface-mount assembly processes.

Replacement Considerations

Consult Toshiba datasheets for direct equivalents within the RN series, such as RN1301 or RN1302, which share similar packages but differ in resistor values. Third-party replacements require matching pinout, VCEO, IC, and hFE specifications to ensure functional parity without redesigning the surrounding circuitry.

RN1303(TE85L,F)RN1303(TE85L,F)

Click on the inquiry