SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN1304,LF is an NPN pre-biased bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors within a compact SOT-323 (USM) surface-mount package. Key electrical specifications include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a transition frequency of 250 MHz. The device dissipates 100 mW of power and features built-in 47 kΩ/47 kΩ bias resistors. This component is designed for high-speed switching applications requiring simplified circuit design.
Verify the specific manufacturer designation, as sourcing data references both Toshiba Semiconductor and Storage and Hitech Semiconductor Co., Limited. Confirm RoHS compliance status and lead-free characteristics through official documentation. Ensure the package type matches the required SOT-323 footprint. Cross-reference part numbers with authorized distributors to avoid counterfeit components.
Select this component when a compact NPN transistor with integrated biasing is required for high-frequency applications. The 50 V rating suits low-voltage logic interfaces. Consider the 100 mA current limit for load requirements. The SOT-323 package is suitable for automated surface-mount assembly processes where board space is limited.
This part belongs to the family of Bias Resistor Built-in Transistors (BRT). These devices replace discrete resistor-transistor networks, reducing component count and assembly time. The RN1304 variant specifically provides NPN configuration with defined internal resistance values, standardizing performance across various electronic systems.
Public confirmed substitute part numbers are not available in the provided source material.