SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN1304,LXHF is a single NPN bias resistor built-in transistor (BRT) from Toshiba Semiconductor and Storage. It integrates internal resistors with a typical value of 47 kOhms for both base and emitter connections, maintaining a ratio of 1. The device supports a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current of 100 mA. It features a minimum DC current gain (hFE) of 80 at 10 mA and 5 V, with a transition frequency of 250 MHz. Power dissipation is rated at 100 mW, operating within a temperature range up to +150°C. The component utilizes an SMD/SMT installation style in the USM-3 package.
Verify the specific suffix LXHF against official Toshiba documentation to confirm packaging details and RoHS status. Ensure compatibility with USM-3 surface mount footprints during procurement planning. Cross-reference the part number with authorized distributors to validate authenticity and traceability. Confirm that the integrated resistor values match the design requirements before finalizing orders.
Select this component when a single NPN BRT with 47 kOhm integrated resistors is required. It is suitable for applications needing 50 V breakdown and 100 mA current handling. Consider the 100 mW power dissipation limit and USM-3 package size for PCB layout constraints. Verify that the 250 MHz frequency response meets the system's switching speed requirements.
The RN1304 belongs to Toshiba's series of pre-biased bipolar transistors designed for general-purpose use. This specific model, RN1304,LXHF, represents the NPN variant with 47 kOhm resistors housed in the USM-3 package. It is part of a broader family offering various resistor values and configurations to support diverse digital switching applications.
Public confirmed substitute part numbers are not available in the provided source material.