RN1305,LF

RN1305,LF

$0.19
  • Description:TRANS PREBIAS NPN 50V 0.1A SC70
  • Series:-

SKU:cbc7a82fc60e Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SC70
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70

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RN1305,LF

Overview

The RN1305,LF is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN epitaxial type silicon transistor with internal bias resistors (R1: 2.2 kOhms, R2: 47 kOhms) into a compact SC-70 surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 10 mA and 5 V, a maximum saturation voltage of 300 mV at 250 µA base current and 5 mA collector current, and a transition frequency of 250 MHz. Maximum power dissipation is rated at 100 mW.

Feature Summary

  • Integrates NPN transistor with fixed bias resistors to reduce component count
  • Designed for high-speed switching applications with 250 MHz transition frequency
  • Compact SC-70 surface-mount package suitable for space-constrained designs

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm exact packaging configuration, as standard part numbers may correspond to multiple tape-and-reel or cut-tape variants. Confirm RoHS compliance status and lead-free certification requirements prior to procurement to ensure alignment with manufacturing standards.

Selection Notes

Select this component when a single NPN pre-biased transistor is required for logic interfacing or low-current switching tasks. Ensure the integrated 2.2 kOhm base resistor and 47 kOhm emitter resistor values match the target circuit design constraints. Verify that the 100 mA collector current limit and 100 mW power dissipation rating are sufficient for the intended load conditions.

Part Context

The RN1305,LF belongs to the RN13xx series of bias resistor built-in transistors from Toshiba. This series consolidates discrete transistor and resistor functions into a single surface-mount device, facilitating simplified schematic design and reduced printed circuit board area consumption compared to using separate components.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

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