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The RN1305,LF is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN epitaxial type silicon transistor with internal bias resistors (R1: 2.2 kOhms, R2: 47 kOhms) into a compact SC-70 surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 10 mA and 5 V, a maximum saturation voltage of 300 mV at 250 µA base current and 5 mA collector current, and a transition frequency of 250 MHz. Maximum power dissipation is rated at 100 mW.
Verify the specific ordering suffix against official Toshiba documentation to confirm exact packaging configuration, as standard part numbers may correspond to multiple tape-and-reel or cut-tape variants. Confirm RoHS compliance status and lead-free certification requirements prior to procurement to ensure alignment with manufacturing standards.
Select this component when a single NPN pre-biased transistor is required for logic interfacing or low-current switching tasks. Ensure the integrated 2.2 kOhm base resistor and 47 kOhm emitter resistor values match the target circuit design constraints. Verify that the 100 mA collector current limit and 100 mW power dissipation rating are sufficient for the intended load conditions.
The RN1305,LF belongs to the RN13xx series of bias resistor built-in transistors from Toshiba. This series consolidates discrete transistor and resistor functions into a single surface-mount device, facilitating simplified schematic design and reduced printed circuit board area consumption compared to using separate components.
Publicly confirmed substitute part numbers are not available in the provided source material.