RN1306,LF

Overview

The RN1306,LF is a single NPN pre-biased bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors within an SC-70 surface-mount package to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device features a typical transition frequency of 250MHz and a maximum power dissipation of 100mW. Internal resistor values consist of a base resistor (R1) of 4.7 kOhms and an emitter-base resistor (R2) of 47 kOhms. Minimum DC current gain is specified as 80 at 10mA and 5V, with a maximum saturation voltage of 300mV under defined test conditions.

Feature Summary

• Integrated bias resistors reduce component count and simplify manufacturing processes
• Compact SC-70 surface-mount package suitable for space-constrained designs
• High-speed switching capability with 250MHz transition frequency

Applications

• Switching circuits in consumer electronics
• Inverter circuits for signal processing
• Interface circuits between logic levels
• Driver circuits for low-power loads

Procurement Notes

Verify the specific ordering suffix when sourcing components, as variations such as TR, CT, or DKR indicate different packaging formats like tape and reel, cut tape, or Digi-Reel. Confirm RoHS compliance status and moisture sensitivity level requirements against project specifications before finalizing procurement orders to ensure supply chain compatibility.

Selection Notes

Select this component when a compact NPN digital transistor with integrated biasing is required for high-frequency switching applications. Ensure the 50V voltage rating and 100mA current capacity meet the load requirements. Verify that the internal resistor ratio aligns with the driving source impedance and desired operating point for optimal saturation performance in the target circuit design.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which combine bipolar junction transistors with built-in bias resistors. These devices are designed to replace multiple discrete components, thereby reducing board space and assembly complexity. The RN1306 specifically provides an NPN configuration optimized for general-purpose switching and interface applications in portable and industrial equipment.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official cross-reference guides or manufacturer datasheets for compatible alternatives that match the SC-70 package, electrical ratings, and pinout configuration.