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The RN1307,LF is a digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with built-in bias resistors in a compact surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 100mA. Internal resistor values are specified as R1 at 4.7 kOhms and R2 at 47 kOhms. The component operates with a maximum power dissipation of 100mW and exhibits a transition frequency of 250MHz. It is designed for switching applications requiring simplified circuit design.
Verify the specific suffix (e.g., LF, TR) against the manufacturer's official datasheet to confirm packaging type and RoHS compliance status. Ensure the ordering part number matches the required tape-and-reel or cut-tape configuration. Confirm availability through authorized distributors as stock levels fluctuate. Cross-reference the manufacturer part number with equivalent listings to avoid counterfeit components.
Select this component when a single NPN digital transistor with 50V rating and 100mA current capacity is required. The internal 4.7k/47k resistor network suits standard logic interface applications. Compare transition frequency and saturation voltage requirements against alternative models in the RN series. Ensure the SC-70 package footprint aligns with the PCB layout constraints.
The RN1307,LF belongs to Toshiba's digital transistor family, which combines bipolar transistors with integrated bias resistors. This series is designed to replace discrete resistor-transistor combinations, reducing board space and assembly costs. It complements other devices in the RN series, offering standardized electrical characteristics for general-purpose switching tasks.
Publicly confirmed complementary or equivalent part numbers for direct substitution are not available in the provided documentation. Verify pin compatibility and electrical parameters before considering any alternative components from different manufacturers.