RN1308,LF

Overview

The RN1308,LF is a single NPN pre-biased bipolar transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates internal bias resistors with typical values of 22 kΩ for the base resistor and 47 kΩ for the emitter resistor. The device features a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current of 100 mA. It operates within a power dissipation limit of 100 mW and supports a maximum operating frequency of 250 MHz. The component is housed in an SMD surface-mount package designated as USM-3, which corresponds to the SC-70 form factor, suitable for automated assembly processes.

Feature Summary

• Integrates built-in bias resistors to simplify circuit design and reduce component count
• Optimized for high-speed switching applications with a transition frequency up to 250 MHz
• Designed for automotive-grade reliability and general-purpose digital logic interfacing

Applications

• Automotive electronic control units requiring AEC-Q100 qualified components
• General-purpose digital signal buffering and level shifting
• Switching circuits in consumer electronics and industrial control systems

Procurement Notes

Verify the specific suffix against official Toshiba documentation to confirm compliance requirements. The LF suffix typically indicates lead-free composition and RoHS compliance, while other suffixes may denote tape-and-reel packaging or specific automotive grades. Ensure the ordering part number matches the required package type and environmental specifications for your manufacturing process.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required for space-constrained designs. The fixed internal resistor values eliminate external bias network calculations. Consider the 50 V voltage rating and 100 mA current capacity to ensure adequate headroom for the intended load. Verify thermal management capabilities given the 100 mW power dissipation limit in the small USM-3 package.

Part Context

This part belongs to Toshiba’s RN series of Bias Resistor Built-in Transistors, designed to replace discrete BJT configurations with simplified two-terminal equivalents. The RN1308 variant specifically targets applications needing reliable NPN switching with minimal peripheral components. It serves as a direct functional replacement for discrete transistor networks in logic interface and driver stages.

Replacement Considerations

• RN1308,LXHF

FAQ

What are the standard internal resistor values for the RN1308,LF?

The typical internal configuration includes a base resistor of 22 kΩ and an emitter resistor of 47 kΩ.

Is the RN1308,LF suitable for automotive applications?

Yes, the RN1308 series is available in automotive-grade versions compliant with AEC-Q100 standards.