RN1309,LF

Overview

The RN1309,LF is a pre-biased NPN transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors to simplify circuit design. The device features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. It operates within a temperature range of -40°C to 125°C. The component utilizes an SC-70 (SOT-323) surface-mount package. Internal resistor values include R1 at 4.7 kOhms and R2 at 47 kOhms. The transition frequency is specified at 250 MHz.

Feature Summary

• Integrated bias resistors for simplified circuit design
• High DC current gain characteristics
• Low saturation voltage for efficient switching
• Compact surface-mount packaging

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific suffix and tape-and-reel specifications against official distributor catalogs before ordering. Confirm RoHS compliance status and lead times with authorized suppliers. Ensure the SC-70 footprint matches the target PCB layout requirements during the procurement phase.

Selection Notes

Select this component when a compact NPN solution with built-in biasing is required for high-speed switching applications. Compare the 4.7 kOhm base resistor value against circuit drive requirements. Verify that the 100 mA collector current rating exceeds the maximum load current in the intended application scenario.

Part Context

This part belongs to the RN series of pre-biased transistors from Toshiba. These devices combine NPN or PNP transistors with internal resistors to reduce component count. The RN1309 specifically provides an NPN configuration suitable for general-purpose digital logic interfacing and signal inversion tasks in portable electronics.

Replacement Considerations

Consult official Toshiba documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before replacing the component in existing designs.