RN1309(TE85L,F)

Overview

The RN1309(TE85L,F) is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN transistor with two internal bias resistors into a single surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 100mA. Internal resistance values are typically 47kΩ for the base resistor (R1) and 10kΩ for the emitter resistor (R2). It operates within a junction temperature range of -55°C to 150°C and dissipates up to 200mW of power.

Feature Summary

• Integrates an NPN transistor with dual bias resistors to reduce component count
• Designed for compact circuit layouts using small surface-mount packaging
• Optimized for switching, inverter, interface, and driver applications

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific suffix TE85L,F against the manufacturer's latest datasheet to confirm tape-and-reel specifications and RoHS compliance status. Ensure the ordering quantity aligns with standard reel sizes to avoid cut-tape handling issues during assembly.

Selection Notes

Select this component when a pre-biased NPN solution is required to simplify PCB layout and reduce assembly costs. Verify that the internal resistor ratios match the target logic levels and drive requirements. Confirm thermal management capabilities meet the system's power dissipation limits under maximum operating conditions.

Part Context

This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors. These devices are engineered to replace discrete transistor and resistor combinations, offering space savings and improved reliability in high-density electronic designs.

Replacement Considerations

Consult official cross-reference lists for equivalent BRTs from other manufacturers. Verify pin compatibility and electrical parameters such as hFE and internal resistance values before substitution.