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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC70
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：250 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70
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Overview
The RN1310,LF is a single NPN epitaxial planar silicon digital transistor with built-in bias resistors. It operates within a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device features an input resistance (R1) of 4.7 kΩ and a typical resistor ratio of 1. Key electrical parameters include a DC current gain (hFE) minimum of 120 at 1 mA, a transition frequency (fT) of 250 MHz, and a collector-emitter saturation voltage of 0.1 V at 5 mA. Power dissipation is rated at 100 mW, with a maximum operating junction temperature of +150 °C.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Integrated bias resistors reduce external component count and assembly time
- Complementary to the RN2310 and RN2311 PNP series
Applications
- Switching circuits
- Inverter circuits
- Interfacing applications
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the intended application scope. The RN1310,LF designation indicates general use classification; ensure compliance with restrictions regarding unintended use in high-reliability sectors such as aerospace or nuclear facilities. Confirm RoHS compatibility status directly with Toshiba sales representatives prior to procurement.
Selection Notes
Select this component when a compact NPN solution with integrated base biasing is required for low-power switching tasks. The 4.7 kΩ input resistance suits standard logic interfacing levels. Ensure the design accounts for the 100 mA collector current limit and 100 mW power dissipation constraints under expected thermal conditions.
Part Context
This part belongs to the RN13xx series of Bipolar Transistors utilizing Toshiba's PCT Process technology. Manufactured since July 1987, it represents a long-standing discrete semiconductor product line designed for cost-effective integration of amplification and biasing functions into a single surface-mount package.
Replacement Considerations
The RN2310 serves as the complementary PNP equivalent within the same family. Cross-reference absolute maximum ratings and pin configurations before substituting with other manufacturers' digital transistors to ensure functional compatibility.
FAQ
What is the typical value of the internal input resistor R1?
The typical input resistance (R1) for the RN1310 is 4.7 kΩ.
Is the RN1310 suitable for automotive applications?
Yes, the RN1310 is AEC-Q101 qualified, making it suitable for automotive electronic systems.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) rating is 50 V.
