SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN1310,LXHF is a single NPN bias resistor built-in transistor (digital transistor) manufactured by Toshiba Semiconductor and Storage. It integrates an internal base resistor to simplify circuit design. Key electrical parameters include a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation of 100 mW. The device features a typical input resistance of 4.7 kΩ and a transition frequency of 250 MHz. It is housed in the USM surface-mount package and meets AEC-Q101 automotive qualification standards.
Verify that the specific ordering suffix matches the required application category. The LXHF suffix indicates general use classification. Confirm AEC-Q101 compliance requirements against the official orderable part number list before procurement. Ensure the selected variant aligns with intended use restrictions defined in the product documentation.
Select this component when a compact NPN digital transistor solution is required for switching or interfacing tasks. The integrated 4.7 kΩ resistor simplifies drive circuitry. Consider the USM package dimensions for PCB layout constraints. Verify thermal derating requirements based on the 100 mW power dissipation limit and operating temperature range.
This component belongs to the RN1310/RN1311 series of silicon NPN epitaxial type bipolar transistors with built-in bias resistors. Commercial production began in July 1987. The series offers various resistance values to accommodate different circuit designs. The RN1310 serves as the NPN counterpart to the PNP RN2310.
Direct substitutes within the same family include RN1310,LF and RN1310,LXGF. These variants share identical electrical characteristics but differ in packaging or qualification status. Verify pin compatibility and package dimensions before substitution.