RN1310,LXHF

RN1310,LXHF

$0.29
  • Description:TRANS PREBIAS NPN 50V 0.1A SC70
  • Series:-

SKU:eddefbc57135 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SC70
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70

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RN1310,LXHF

Overview

The RN1310,LXHF is a single NPN bias resistor built-in transistor (digital transistor) manufactured by Toshiba Semiconductor and Storage. It integrates an internal base resistor to simplify circuit design. Key electrical parameters include a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation of 100 mW. The device features a typical input resistance of 4.7 kΩ and a transition frequency of 250 MHz. It is housed in the USM surface-mount package and meets AEC-Q101 automotive qualification standards.

Feature Summary

  • Integrated bias resistor reduces external component count and assembly time
  • AEC-Q101 qualified for automotive applications
  • Complementary configuration available with PNP counterpart

Applications

  • Switching circuits
  • Inverter circuits
  • Interfacing applications
  • Driver circuits

Procurement Notes

Verify that the specific ordering suffix matches the required application category. The LXHF suffix indicates general use classification. Confirm AEC-Q101 compliance requirements against the official orderable part number list before procurement. Ensure the selected variant aligns with intended use restrictions defined in the product documentation.

Selection Notes

Select this component when a compact NPN digital transistor solution is required for switching or interfacing tasks. The integrated 4.7 kΩ resistor simplifies drive circuitry. Consider the USM package dimensions for PCB layout constraints. Verify thermal derating requirements based on the 100 mW power dissipation limit and operating temperature range.

Part Context

This component belongs to the RN1310/RN1311 series of silicon NPN epitaxial type bipolar transistors with built-in bias resistors. Commercial production began in July 1987. The series offers various resistance values to accommodate different circuit designs. The RN1310 serves as the NPN counterpart to the PNP RN2310.

Replacement Considerations

Direct substitutes within the same family include RN1310,LF and RN1310,LXGF. These variants share identical electrical characteristics but differ in packaging or qualification status. Verify pin compatibility and package dimensions before substitution.

RN1310,LXHFRN1310,LXHF
$0.29
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